Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Ultrathin Oxynitride P-Mosfet Recovery Characteristics under NBTI Stress

Evidence on p-MOSFET recovery characteristics under NBT stress

Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

Recovery Characteristics of Nbti of Pmosfets with Oxynitride Dielectrics under Drain Bias

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Issues And Controversies In Nbti Degradation And Recovery Mechanisms For P-Mosfets With Sion Gate Dielectrics

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

New Insights of Bti Degradation in Mosfets with Sion Gate Dielectrics

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Stress Induced Leakage Current under NBT Stress in P-Mosfets Fabricated with 65nm Technologies

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Poststress Recovery Mechanism Of The Negative Bias Temperature Instability Based On Dispersive Transport