Abstract:The traps induced degradation of the Al 2 O 3 and LaAlO 3 based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al 2 O 3 and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected by the stress. Different from traps in Al 2 O 3 , oxygen vacancies and interstitial Aluminum ions in LaAlO 3 have important roles in PBTI. Simulated results indicate that Al 2 O 3 have better PBTI and recovery than that of LaAlO 3 .

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Reliability of inversion channel InGaAs n-MOSFETs

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Insight into PBTI in InGaAs nanowire FETs with Al<inf>2</inf>O<inf>3</inf> and LaAlO<inf>3</inf> gate dielectrics

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

PBTI Investigation of MoS2 N-Mosfet with Al2O3 Gate Dielectric

Trapping and Detrapping of Oxide Border Traps in Al2o3 Gate Dielectric in Mos2 N-Mosfets under Pbti Stress

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

Negative Bias Temperature Instability of HfN/HfO2 Gated P-Mosfets

Electrical Performances Degradations and Physics Based Mechanisms under Negative Bias Temperature Instability Stress for P-Gan Gate High Electron Mobility Transistors

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Investigation of Degradation and Recovery Characteristics of NBTI in 28-Nm High-K Metal Gate Process

Bias Temperature Stress Induced Hydrogen Depassivation from Al2O3/InGaAs Interface Defects