Abstract:The traps induced degradation of the Al 2 O 3 and LaAlO 3 based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al 2 O 3 and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected by the stress. Different from traps in Al 2 O 3 , oxygen vacancies and interstitial Aluminum ions in LaAlO 3 have important roles in PBTI. Simulated results indicate that Al 2 O 3 have better PBTI and recovery than that of LaAlO 3 .

Insight into PBTI in InGaAs nanowire FETs with Al<inf>2</inf>O<inf>3</inf> and LaAlO<inf>3</inf> gate dielectrics

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

PBTI evaluation of In 0.65 Ga 0.35 As/In 0.53 Ga 0.47 As nanowire FETs with Al 2 O 3 and LaAlO 3 gate dielectrics

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric Under PBTI Stress

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Trapping and Detrapping of Oxide Border Traps in Al2o3 Gate Dielectric in Mos2 N-Mosfets under Pbti Stress

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Impacts Of Non-Negligible Electron Trapping/Detrapping On The Nbti Characteristics In Silicon Nanowire Transistors With Tin Metal Gates

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Positive Bias Temperature Instabilities in Vertical Gate-all-around Poly-Si Nanowire Field-effect Transistors

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Reliability of inversion channel InGaAs n-MOSFETs

Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects