Abstract:The traps induced degradation of the Al 2 O 3 and LaAlO 3 based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al 2 O 3 and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected by the stress. Different from traps in Al 2 O 3 , oxygen vacancies and interstitial Aluminum ions in LaAlO 3 have important roles in PBTI. Simulated results indicate that Al 2 O 3 have better PBTI and recovery than that of LaAlO 3 .

Impacts Of Non-Negligible Electron Trapping/Detrapping On The Nbti Characteristics In Silicon Nanowire Transistors With Tin Metal Gates

HCI and NBTI Induced Degradation in Gate-All-around Silicon Nanowire Transistors

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

New Observations on the Hot Carrier and NBTI Reliability of Silicon Nanowire Transistors

New Insights into Oxide Traps Characterization in Gate-All-around Nanowire Transistors with TiN Metal Gates Based on Combined Ig-Id RTS Technique

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Gate Bias Stress Instability And Hysteresis Characteristics Of Inas Nanowire Field-Effect Transistors

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Positive Bias Temperature Instabilities in Vertical Gate-all-around Poly-Si Nanowire Field-effect Transistors

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Insight into PBTI in InGaAs nanowire FETs with Al<inf>2</inf>O<inf>3</inf> and LaAlO<inf>3</inf> gate dielectrics

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

Analysis of gate-induced drain leakage in gate-all-around nanowire transistors

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Experimental Study On Quasi-Ballistic Transport In Silicon Nanowire Transistors And The Impact Of Self-Heating Effects

The Effect of Nitrogen on the Energy Distribution of Hole Traps Generated under Negative Bias Temperature Stress