Abstract:Because of the excellent electrical properties, III-V semiconductor nanowires are promising building blocks for next-generation electronics; however, their rich surface states inevitably contribute large amounts of charge traps, leading to gate bias stress instability and hysteresis characteristics in nanowire field-effect transistors (FETs). Her; we investigated thoroughly the gate bias stress and hysteresis effects in InAs nanowire FETs. It is observed that the output current decreases together with the threshold voltage shifting to the positive direction when a positive gate bias stress is applied, and vice versa for the negative gate bias stress. For double-sweep transfer characteristics, the significant hysteresis behavior is observed, depending heavily on the sweeping rate and range. On the basis of complementary investigations of these devices, charge traps are confirmed to be the dominant factor for these instability effects. Importantly, the hysteresis can be simulated well by utilizing a combination of the rate equation for electron density and the empirical model for electron mobility. This provides an accurate evaluation of carrier mobility, which is in distinct contrast to the overestimation of mobility when using the transconductance for calculation. All these findings are important for understanding the charge trap dynamics to further enhance the device performance of nanowire FETs.

Positive Bias Temperature Instabilities in Vertical Gate-all-around Poly-Si Nanowire Field-effect Transistors

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

HCI and NBTI Induced Degradation in Gate-All-around Silicon Nanowire Transistors

Gate Bias Stress Instability And Hysteresis Characteristics Of Inas Nanowire Field-Effect Transistors

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

PBTI evaluation of In 0.65 Ga 0.35 As/In 0.53 Ga 0.47 As nanowire FETs with Al 2 O 3 and LaAlO 3 gate dielectrics

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

New Observations on the Hot Carrier and NBTI Reliability of Silicon Nanowire Transistors

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Improved Positive Bias Temperature Instability of N-Type Vertical C-Shaped-Channel Nanosheet FET by Forming Gas Annealing

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

Impacts Of Non-Negligible Electron Trapping/Detrapping On The Nbti Characteristics In Silicon Nanowire Transistors With Tin Metal Gates