Abstract:The traps induced degradation of the Al 2 O 3 and LaAlO 3 based InGaAs nanowire FETs are investigated by 3D Kinetic Monte-Carlo (KMC) method considering trap coupling and trap generation. The measurement time constants of the defect in Al 2 O 3 and positive bias temperature instability (PBTI) can be well interpreted by consideration with metastable state. The power law of threshold shift can be greatly affected by the stress. Different from traps in Al 2 O 3 , oxygen vacancies and interstitial Aluminum ions in LaAlO 3 have important roles in PBTI. Simulated results indicate that Al 2 O 3 have better PBTI and recovery than that of LaAlO 3 .

PBTI evaluation of In 0.65 Ga 0.35 As/In 0.53 Ga 0.47 As nanowire FETs with Al 2 O 3 and LaAlO 3 gate dielectrics

Insight into PBTI in InGaAs nanowire FETs with Al<inf>2</inf>O<inf>3</inf> and LaAlO<inf>3</inf> gate dielectrics

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Positive Bias Temperature Instabilities in Vertical Gate-all-around Poly-Si Nanowire Field-effect Transistors

Correlation of I<inf>d</inf>- and I<inf>g</inf>-random Telegraph Noise to Positive Bias Temperature Instability in Scaled High-&Amp;#x03ba;/metal Gate N-Type MOSFETs

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Improved Positive Bias Temperature Instability of N-Type Vertical C-Shaped-Channel Nanosheet FET by Forming Gas Annealing

Bias Temperature Instability of Normally‐Off GaN MIS‐FET with Low‐Pressure Chemical Vapor Deposition SiNx Gate Dielectric

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Fluorine IMP effect on negative bias temperature instability and process induced defects

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Investigation of PBTI Degradation in Nanosheet nFETs With HfO 2 Gate Dielectric by 3D-KMC Method

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods