Abstract:In this work, the reliability of BTI in top‐gate CNT FETs under a wide range of temperatures is investigated firstly. The CNT devices not only exhibit a high on/off current ratio (Ion/Ioff, ≈105) and a low subthreshold swing (SS) ranging from 200 to 400 K, but also the threshold voltage (Vth) shifts caused by BTI become 2–3 times smaller than previous works. In addition, by optimizing the device fabrication process, the CNT FET presents the Normalized BTI shift down to ≈0.10 V/(MV cm−1), which is by far the most reliable top‐gate nanodevices. Carbon nanotube (CNT) is widely regarded as a promising candidate for constructing sub‐10 nm field‐effect transistors (FETs). However, limited attention is carried out on the reliability of CNT FETs, which is critical for practical application. In this work, the bias temperature instability (BTI) effect in top‐gate CNT FETs is thoroughly investigated under a wide range of environment temperatures from 200 to 400 K for the first time. Notably, the threshold voltage (Vth) shifts induced by BTI are measured down to 0.38 V, which is ≈2–3 times smaller than those reported in previous studies. In addition, by optimizing the device fabrication process, the reliability of the BTI effects in CNT FETs can be further improved. The optimized CNT FET exhibits a Normalized BTI shift down to ≈0.10 V/(MV cm−1), which represents the most reliable top‐gate nano‐devices to date.

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PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

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Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

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Effects of Forming Gas Anneal on Ultrathin InGaAs Nanowire Metal-Oxide-semiconductor Field-Effect Transistors

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Overcoming Ambient Drift and Negative-Bias Temperature Instability in Foundry Carbon Nanotube Transistors