Abstract:This paper studies the effect of drain bias on ultra-short p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) degradation during negative bias temperature (NBT) stress. When a relatively large gate voltage is applied, the degradation magnitude is much more than the drain voltage which is the same as the gate voltage supplied, and the time exponent gets larger than that of the NBT instability (NBTI). With decreasing drain voltage, the degradation magnitude and the time exponent all get smaller. At some values of the drain voltage, the degradation magnitude is even smaller than that of NBTI, and when the drain voltage gets small enough, the exhibition of degradation becomes very similar to the NBTI degradation. When a relatively large drain voltage is applied, with decreasing gate voltage, the degradation magnitude gets smaller. However, the time exponent becomes larger. With the help of electric field simulation, this paper concludes that the degradation magnitude is determined by the vertical electric field of the oxide, the amount of hot holes generated by the strong channel lateral electric field at the gate/drain overlap region, and the time exponent is mainly controlled by localized damage caused by the lateral electric field of the oxide in the gate/drain overlap region where hot carriers are produced.

Correlation of I<inf>d</inf>- and I<inf>g</inf>-random Telegraph Noise to Positive Bias Temperature Instability in Scaled High-&Amp;#x03ba;/metal Gate N-Type MOSFETs

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Defects for Random Telegraph Noise and Negative Bias Temperature Instability

Dependence of the Dc Stress Negative Bias Temperature Instability Effect on Basic Device Parameters in Pmosfet

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

The Physical Mechanisms of IG Random Telegraph Noise in Deeply Scaled Pmosfets

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Electrical Performances Degradations and Physics Based Mechanisms under Negative Bias Temperature Instability Stress for P-Gan Gate High Electron Mobility Transistors

Influence of Ultra-Thin Tin Thickness (1.4 Nm and 2.4 Nm) on Positive Bias Temperature Instability (pbti) of High-K/Metal Gate Nmosfets with Gate-Last Process

As-grown-Generation Model for Positive Bias Temperature Instability

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Study on the Drain Bias Effect on Negative Bias Temperature Instability Degradation of an Ultra-Short P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last process

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Correlation of I&lt;inf&gt;d&lt;/inf&gt;- and I&lt;inf&gt;g&lt;/inf&gt;-random Telegraph Noise to Positive Bias Temperature Instability in Scaled High-&Amp;#x03ba;/metal Gate N-Type MOSFETs