Abstract:The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET was investigated by accelerated stress tests. The results show that NBTI leads to a threshold voltage negative shift, saturate drain current reduction and transconductance degradation of the PMOSFET. Next, the relationship between the threshold voltage shift and stress time, gate bias and temperature, and the channel length is investigated, and the NBTI lifetime prediction model is established. The results show that the NBTI lifetime of a 130 nm T-Gate PDSOI PMOSFET is approximately 18.7 years under the stress of VG = -1.2 V and T = 125 °C. Finally, the effect of the floating-body effect on NBTI of PDSOI PMOSFET is investigated. It is found that the NBTI degradation of T-Gate SOI devices is greater than that of the floating-body SOI devices, which indicates that the floating-body effect suppresses the NBTI degradation of SOI devices.

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Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

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Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

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PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Modeling Of Nbti Stress Induced Hole-Trapping And Interface-State-Generation Mechanisms Under A Wide Range Of Bias Conditions

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled Pmosfets

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Localized Thermal Effect Enhanced NBTI in Multifin Pfinfets under Low Drain Bias

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions