Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

The Combined Impact of Total Ionizing Dose Effect and Negative Bias Temperature Stress on Deep Sub-Micron Pmosfets

Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Prediction of NBTI Degradation in Dynamic Voltage Frequency Scaling Operations

Reliability Analysis of P-type SOI FinFETs with Multiple SiGe Channels on the Degradation of NBTI

Negative bias temperature instability lifetime prediction: Problems and solutions

Understanding lifetime prediction methodology for In<inf>0.53</inf>Ga<inf>0.47</inf>As nFETs under Positive Bias Temperature Instability (PBTI) condition

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Difference Analysis Method for Negative Bias Temperature Instability Lifetime Prediction in Deeply Scaled Pmosfets

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

On the Assessment of End-of-life Variability Induced by Stochastic NBTI in Nanoscale MOSFETs Accompanying Conspicuous RTN

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Numerical analysis of device lifetime change caused by interface feedback under NBTI stress: Numerical analysis of device lifetime change caused by interface feedback under NBTI stress

NBTI-related issues in deep submicron pMOSFETs

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks