Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

HCI and NBTI Induced Degradation in Gate-All-around Silicon Nanowire Transistors

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

New Observations on the Hot Carrier and NBTI Reliability of Silicon Nanowire Transistors

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Investigation of Analog/RF Performance and Reliability Behavior of Silicon Nanowire MOSFETs

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

Positive Bias Temperature Instabilities in Vertical Gate-all-around Poly-Si Nanowire Field-effect Transistors

Reliability Analysis of P-type SOI FinFETs with Multiple SiGe Channels on the Degradation of NBTI

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Impacts Of Non-Negligible Electron Trapping/Detrapping On The Nbti Characteristics In Silicon Nanowire Transistors With Tin Metal Gates

NBTI-related issues in deep submicron pMOSFETs

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Modeling Of Nbti Stress Induced Hole-Trapping And Interface-State-Generation Mechanisms Under A Wide Range Of Bias Conditions

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale Pmos Devices

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Impact of negative bias temperature instability on single event transients in scaled logic circuits