Abstract:A new on-line methodology is used to characterize the negative bias temperature instability ( NBTI) without inherent recovery. Saturation drain voltage shift and mobility shift are extracted by ID - VD characterizations, which were measured before stress, and after every certain stress phase, using the proportional differential operator (PDO) method. The new on-line methodology avoids the mobility linearity assumption as compared with the previous on the fly method. It is found that both reaction - diffusion and charge-injection processes are important in NBTI effect under either DC or AC stress. A similar activation energy, 0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is independent of temperature below 90 degrees C and sharply increases above it. The frequency dependence of NBTI degradation shows that NBTI degradation is independent of frequencies. The carrier tunnelling and reaction - diffusion mechanisms exist simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier tunnelling dominates the earlier NBTI stage and the reaction - diffusion mechanism follows when the generation rate of traps caused by carrier tunnelling reaches its maximum.

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale Pmos Devices

Models of Source/Drain Bias on Negative Bias Temperature Instability

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

NBTI-related issues in deep submicron pMOSFETs

Recovery Characteristics of Nbti of Pmosfets with Oxynitride Dielectrics under Drain Bias

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

A New Model for Two-Dimensional Electrical-Field-Dependent $v_{\rm Th}$ Instability of Pmosfets with Ultrathin DPN Gate Dielectrics

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Poststress Recovery Mechanism Of The Negative Bias Temperature Instability Based On Dispersive Transport

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range