Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

A New Model for Two-Dimensional Electrical-Field-Dependent $v_{\rm Th}$ Instability of Pmosfets with Ultrathin DPN Gate Dielectrics

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale Pmos Devices

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

Threshold Voltage Instability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Hafnium Based Dielectrics

Modeling of Degradation Caused by Channel Hot Carrier and Negative Bias Temperature Instability Effects in P-Mosfets

Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

Understand NBTI Mechanism by Developing Novel Measurement Techniques

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

Investigation of nitrogen enhanced NBTI effect using the universal prediction model

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Recent Progress in Understanding the Instability and Defects in Gate Dielectrics

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability