Abstract:CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a key issue. To optimize chip design, trade-offs between reliability, speed, power consumption, and cost must be carried out. This requires modeling and prediction of device instability, and a major source of instability is device aging, where defects gradually build up and eventually cause malfunction of circuits. This paper first gives an overview of the major aging processes and discusses their relative importance as CMOS technology developed. Attentions are then focused on the negative and positive bias temperature instabilities (NBTI and PBTI), mainly based on the early works of the authors. The aim is to present the As-grown-Generation (AG) model, which can be used not only to fit the test data but also to predict long-term BTI at low biases. The model is based on an in-depth understanding of the different types of defects and the experimental separation of their contributions to BTI. The new measurement techniques developed to enable this separation are reviewed. The physical processes responsible for BTI are explored, and the reasons for the failure of the early models in predicting BTI are discussed.

Models of Source/Drain Bias on Negative Bias Temperature Instability

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale Pmos Devices

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Consistent Model of NBTI with Low Drain Voltage in P-MOSFETs

Correlation of I<inf>d</inf>- and I<inf>g</inf>-random Telegraph Noise to Positive Bias Temperature Instability in Scaled High-&Amp;#x03ba;/metal Gate N-Type MOSFETs

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction

Impact of Sensing Gate Bias on NBTI of Hf-based Dielectric Stacks

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

An Analytical Model for Negative Bias Temperature Instability

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

Modeling Of Nbti Stress Induced Hole-Trapping And Interface-State-Generation Mechanisms Under A Wide Range Of Bias Conditions

As-grown-Generation Model for Positive Bias Temperature Instability

Recovery Characteristics of Nbti of Pmosfets with Oxynitride Dielectrics under Drain Bias

Pulse Stress Frequency Dependence Of Negative Bias Temperature Instability In Sion Gate Transistors

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

A novel negative bias temperature instability model for nanoscale finfet

NBTI-related issues in deep submicron pMOSFETs

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET