Abstract:A universal framework for describing the temperature enhanced negative bias temperature instability (NBTI) is developed in this paper. Analytical time evolution models of the NBTI mechanisms, as Pbcenter generation and hole-transport in the oxygen vacancies, are proposed based on careful investigation of atom-level microscopic pictures. A logarithmic time function is derived to describe the interface state (Pbcenter) generation and recovery evolution by revealing a fact that the activation energy is significantly modified by the accumulation of generated defects. Corresponding coefficients, including the generation amplitudes and time constant, are identified depending on temperature linearly and exponentially. Moreover, the unrecoverable oxide hole-trapping is proposed resulted from the hole-transport among deep-level oxygen vacancies driven by electrical field within the gate oxide. A power-law time function is derived to describing this evolution, with time exponent linear to temperature. Parameters calculated by the proposed analytical models reveal good consistent with the parameters directly extracted from the measured data, indicating the validation and universality of the physical based framework in reproducing the parametric shift of the NBTI degradation under various temperature conditions and process technologies. © 2016 The Japan Society of Applied Physics.

An Analytical Model for Negative Bias Temperature Instability

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Models of Source/Drain Bias on Negative Bias Temperature Instability

New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

A novel negative bias temperature instability model for nanoscale finfet

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Universal framework for temperature dependence prediction of the negative bias temperature instability based on microscope pictures

Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction

As-grown-Generation Model for Positive Bias Temperature Instability

NBTI-related issues in deep submicron pMOSFETs

Difference Analysis Method for Negative Bias Temperature Instability Lifetime Prediction in Deeply Scaled Pmosfets

Model of NBTI combined with mobility degradation

Physical Understanding of Negative Bias Temperature Instability below Room Temperature

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

Reliability Analysis of Memories Suffering MBUs for the Effect of Negative Bias Temperature Instability

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation

Modeling Of Nbti Stress Induced Hole-Trapping And Interface-State-Generation Mechanisms Under A Wide Range Of Bias Conditions

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

As-grown-Generation (A-G) Model for Positive Bias Temperature Instability (PBTI)