Abstract:Aging effects in digital circuits change the switching characteristics of their transistors, resulting in timing violations that can lead to functional errors at the system level. In particular, bias temperature instability (BTI) is a degradation effect that changes the threshold voltage of transistors. Its effect is more prevalent as the scaling of transistor dimensions progresses. In this work, we present a method to enable defect-centric long-term modeling of BTI degradation that takes into account the effects of concrete workloads at the processor data path level. Based on this study, we propose a novel design flow to link the impact of BTI degradation at the transistor ( ${Delta {}V_{text {th}}}$ ), processor data path (e.g., maximum frequency) and application-functionality levels. This flow may be used to improve system correctness over the entire device lifetime, avoiding unsafe working points, or to achieve a graceful degradation of system characteristics. Our design flow is applicable to all types of digital circuits, including high-performance processors. However, in this specific work we focus on the domain of biosignal processing applications for wireless body sensor networks (WBSNs), the pseudoperiodic nature of which interacts with the partially recoverable nature of BTI. Our results in this domain show, for a 32-nm implementation, a variation of up to 54.6 mV in the threshold voltage of the circuit transistors after one year of continuous operation, with an impact of 8.4% in the maximum safe operating frequency. Such effects are expected to strongly worsen for longer lifetimes and more scaled technology nodes.

New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

A Framework for Estimating NBTI Degradation of Microarchitectural Components

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

A Machine Learning Based Reliability Analysis of Negative Bias Temperature Instability (NBTI) Compliant Design for Ultra Large Scale Digital Integrated Circuit

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Process Variation and Temperature-Aware Reliability Management

An Analytical Model for Negative Bias Temperature Instability

Impact of negative bias temperature instability on single event transients in scaled logic circuits

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation

Analysis of Functional Errors Produced by Long-Term Workload-Dependent BTI Degradation in Ultralow Power Processors

Temperature-aware NBTI Modeling and the Impact of Input Vector Control on Performance Degradation

Bias Temperature Instability Model Using Dynamic Defect Potential for Predicting CMOS Aging

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

NBTI-related issues in deep submicron pMOSFETs

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

Combating NBTI-induced aging in data caches.

Understanding NBTI-induced Dynamic Variability in the Nano-Reliability Era: from Devices to Circuits

Novel Critical Gate-Based Circuit Path-Level NBTI-Aware Aging Circuit Degradation Prediction.

Statistical Reliability Analysis under Process Variation and Aging Effects