Understanding NBTI-induced Dynamic Variability in the Nano-Reliability Era: from Devices to Circuits

Runsheng Wang,Pengpeng Ren,Changze Liu,Shaofeng Guo,Ru Huang

DOI: https://doi.org/10.1109/ipfa.2015.7224347

2015-01-01

Abstract:This paper gives a brief overview of our recent findings on the NBTI-induced dynamic variations during device/circuit aging.

What problem does this paper attempt to address?

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Shaofeng Guo,Runsheng Wang,Pengpeng Ren,Changze Liu,Mulong Luo,Xiaobo Jiang,Yangyuan Wang,Ru Huang

DOI: https://doi.org/10.1016/j.microrel.2017.11.028

IF: 1.6

2018-01-01

Microelectronics Reliability

Abstract:With the downscaling of CMOS devices, dynamic variability induced by negative bias temperature instability (NBTI) has become a critical issue. In addition to the time-dependent device-to-device variation (DDV) of NBTI degradation, the cycle-to-cycle variation (CCV) originated from random trap occupation is found non-negligible and should be added into the total dynamic variation. This paper summarizes our recent studies on NBTI-induced dynamic variability, focusing on the CCV effect, with more details on the statistical modeling, circuit reliability simulation methodologies and experimental results. By adding the random trap occupation into consideration, a statistical model for total dynamic variation (DDV+CCV) is proposed. The effective occupancy probability peff is introduced as a key parameter for modeling and circuit reliability simulation. With the statistical trap response (STR) method and modified on-the-fly method, the proposed model is validated by the experimental evidence under both DC and AC NBTI. According to the model and experimental results, circuit reliability simulation framework is proposed for both long-term quasi-static and short-term transient performance evaluation with the additional impact of CCV. Two representative digital circuit units, ring oscillator (RO) and SRAM cell, are simulated under different conditions, indicating it necessary to consider the evident influence of the CCV in accurate circuit reliability evaluation. The results are helpful for the reliability/variability-aware circuit design in nanoscale technology.
Towards The Systematic Study Of Aging Induced Dynamic Variability In Nano-Mosfets: Adding The Missing Cycle-To-Cycle Variation Effects Into Device-To-Device Variation

Changze Liu,Jibin Zou,Runsheng Wang,Ru Huang,Xiaoqing Xu,Jinhua Liu,Hanming Wu,Yangyuan Wang

DOI: https://doi.org/10.1109/IEDM.2011.6131612

2011-01-01

Abstract:In this paper, the NBTI induced dynamic V-th variability in nano-scaled MOSFETs is comprehensively studied. In addition to the device-to-device variation (DDV) of NBTI degradation, the non-negligible cycle-to-cycle variation (CCV) due to the random occupation of trap states in each operation cycle is observed for the first time. By using the statistical trap-response (STR) technique, a new characterization scheme of the NBTI induced total Delta V-th variation is proposed, combining both DDV (random spatial distribution of trap positions) and CCV together. This systematic study clarifies the superposition of the missing part of trap occupancy probability in the NBTI reliability induced dynamic variation. The single-trap occupancy behaviors as well as the comparison between DC/AC NBTI effects are also studied for microscopic understanding and accurate prediction of the dynamic V-th variation due to NBTI degradation in ultra-scaled devices.
New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Κ/metal-gate Technology for the Nano-Reliability Era

Pengpeng Ren,Runsheng Wang,Zhigang Ji,Peng Hao,Xiaobo Jiang,Shaofeng Guo,Mulong Luo,Meng Duan,Jian F. Zhang,Jianping Wang,Jinhua Liu,Weihai Bu,Jingang Wu,Waisum Wong,Shaofeng Yu,Hanming Wu,Shiuh-Wuu Lee,Nuo Xu,Ru Huang

DOI: https://doi.org/10.1109/iedm.2014.7047165

2014-01-01

Abstract:In this paper, a new methodology for the assessment of end-of-life variability of NBTI is proposed for the first time. By introducing the concept of characteristic failure probability, the uncertainty in the predicted 10-year VDD is addressed. Based on this, variability resulted from NBTI degradation at end of life under specific VDD is extensively studied with a novel characterization technique. With the further circuit level analysis based on this new methodology, the timing margin can be relaxed. The new methodology has also been extended to FinFET in this work. The wide applicability of this methodology is helpful to future reliability/variability-aware circuit design in nano-CMOS technology.
New Observations on AC NBTI Induced Dynamic Variability in Scaled High-Κ/metal-gate MOSFETs: Characterization, Origin of Frequency Dependence, and Impacts on Circuits

Changze Liu,Pengpeng Ren,Runsheng Wang,Ru Huang,Jiaojiao Ou,Qianqian Huang,Jibin Zou,Jianping Wang,Jingang Wu,Shaofeng Yu,Hanming Wu,Shiuh-Wuu Lee,Yangyuan Wang

DOI: https://doi.org/10.1109/iedm.2012.6479075

2012-01-01

Abstract:In this paper, the frequency dependence of the dynamic variation induced by AC NBTI aging in scaled high-κ/metal-gate devices are experimentally studied for the first time. Challenges in comprehensively characterizing AC NBTI induced variation are addressed by the modified method. The additional variation source in AC NBTI, originating from the variations among each AC clock cycle, is found to be non-negligible and thus should be included in predicting circuit stability. With increasing AC frequency, the mean value (μ) of the Vth shift (ΔVth) is reduced as expected; however, the variation (σ) of ΔVth is almost unchanged, which surprisingly disagrees with the conventional model predicting the reduced variation. The origin of this new observation is found due to the competitive impacts of the activated trap number and the trap occupancy probability during device aging. Taken clock-CCV and frequency dependence into account, the impacts of AC NBTI on the SRAM cell stability can be evaluated in terms of both degradation and variation. The results are helpful for the future variability-aware circuit design.
Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Yiming Qu,Chu Yan,Yaru Ding,Yi Zhao

DOI: https://doi.org/10.1109/irps48228.2024.10529378

2024-01-01

Abstract:In this paper, we have monitored the cycle-to-cycle variation (CCV) of ultra-scaled FinFETs during hot carrier degradation (HCD) and bias temperature instability (BTI) stress. Different measurement speeds have been utilized to separate the intrinsic CCV from the stress-induced CCV. Statistical Vth of nFinFETs shows under the same amount of Delta Vth, PBTI induces a larger dynamic variability than HCD. Surprisingly, pFinFETs with under much V-th degradation exhibit only a little Vth variation, suggesting its less sensitivity to stress-induced CCV. Furthermore, tremendous experimental data reveal that the oxide trap plays a key role in dynamic variability, especially in aged devices. This study is helpful for the reliability variability-aware device/circuit co-design in advanced technology nodes.
Process Variation and Temperature-Aware Reliability Management

Cheng Zhuo,Dennis Sylvester,David Blaauw

DOI: https://doi.org/10.1109/date.2010.5457139

2010-01-01

Abstract:In aggressively scaled technologies, reliability concerns such as oxide breakdown have become a key issue. Dynamic reliability management (DRM) has been proposed as a mechanism to dynamically explore the tradeoff between system performance and reliability margin. However, existing DRM methods are hampered by the fact that they do not accurately model spatial and temporal variations in process and temperature parameters which have a strong impact on chip reliability. In addition, they make the simplifying assumption that the future workloads are identical to the currently observed one. This makes them sensitive to sudden workload variations and outliers. In this paper, we present a novel workload-aware dynamic reliability management framework that accounts for local variations in both the process and temperature. The reliability estimation, along with the predicted remaining workload is fed to a dynamic voltage/frequency scaling module to manage the system reliability and optimize processor performance. Using a fast on-line analytical/table-look-up method we demonstrate an average error of 1% with up to 5 orders of magnitude speedup compared to Monte Carlo simulation. Experiments on an Alphalike processor show our DRM framework fully utilizes the available margin and achieves 28.7% performance improvement on average.
Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Hong Luo,Yu Wang,Rong Luo,Huazhong Yang

DOI: https://doi.org/10.1007/s11767-009-0035-1

2009-01-01

Abstract:As semiconductor manufacturing migrates to more advanced technology nodes, accelerated aging effect for nanoscale devices poses as a key challenge for designers to find countermeasures that effectively mitigate the degradation and prolong system’s lifetime. Negative Bias Temperature Instability (NBTI) is emerging as one of the major reliability concerns. Two software tools for NBTI analyzing are proposed in this paper, one for transistor-level, and the other for gate-level. The transistor-level can be used to estimate the delay degradation due to NBTI effect very accurately, while the gate-level can be used for repeat analysis in circuit optimization because of its fast computing speed.
Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Cheng Zhuo,Kaviraj Chopra,Dennis Sylvester,David Blaauw

DOI: https://doi.org/10.1109/tcad.2011.2142183

IF: 2.9

2011-01-01

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.
New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

Michael DeBole,Ramakrishnan Krishnan,Varsha Balakrishnan,Wenping Wang,Hong Luo,Yu Wang,Yuan Xie,Yu Cao,N. Vijaykrishnan

DOI: https://doi.org/10.1007/s10766-009-0104-y

2009-01-01

International Journal of Parallel Programming

Abstract:Degradation of device parameters over the lifetime of a system is emerging as a significant threat to system reliability. Among the aging mechanisms, wearout resulting from Negative Bias Temperature Instability (NBTI) is of particular concern in deep submicron technology generations. While there has been significant effort at the device and circuit level to model and characterize the impact of NBTI, the analysis of NBTI’s impact at the architectural level is still at its infancy. To facilitate architectural level aging analysis, a tool capable of evaluating NBTI vulnerabilities early in the design cycle has been developed that evaluates timing degradation due to NBTI. The tool includes workload-based temperature and performance degradation analysis across a variety of technologies and operating conditions, revealing a complex interplay between factors influencing NBTI timing degradation.
A Framework for Estimating NBTI Degradation of Microarchitectural Components

Michael DeBole,K. Ramakrishnan,Varsha Balakrishnan,Wenping Wang,Hong Luo,Yu Wang,Yuan Xie,Yu Cao,N. Vijaykrishnan

DOI: https://doi.org/10.1109/aspdac.2009.4796522

2009-01-01

Abstract:Degradation of device parameters over the lifetime of a system is emerging as a significant threat to system reliability. Among the aging mechanisms, wearout resulting from NBTI is of particular concern in deep submicron technology generations. To facilitate architectural level aging analysis, a tool capable of evaluating NBTI vulnerabilities early in the design cycle has been developed. The tool includes workload-based temperature and performance degradation analysis across a variety of technologies and operating conditions, revealing a complex interplay between factors influencing NBTI timing degradation.
Impacts of cycle-to-cycle variation effects on the prediction of NBTI degradation and the resulted dynamic variations in high-к MOSFETs

pengpeng ren,changze liu,runsheng wang,meng li,yangyuan wang,ru huang

DOI: https://doi.org/10.1109/VLSI-TSA.2013.6545599

2013-01-01

Abstract:In this paper, the impacts of cycle-to-cycle variation (CCV) effects on the predictions of NBTI degradation and the resulted dynamic variations are studied in highly-scaled high-κ pFETs. By adopting the statistical trap-response (STR) technique, the 2-D distributions and the correlations of key parameters in compact NBTI models due to both device-to-device variation (DDV) and cycle-to-cycle variation (CCV) are extracted. Large error can be found if not considering the CCV effects in predicting the NBTI degradations and resulted time-dependent variations. Different compact NBTI models are also compared for accurate reliability-variability predictions in nanoscale device and circuit design.
Statistical Reliability Analysis under Process Variation and Aging Effects

Yinghai Lu,Li Shang,Hai Zhou,Hengliang Zhu,Fan Yang,Xuan Zeng

DOI: https://doi.org/10.1145/1629911.1630044

2009-01-01

Abstract:Circuit reliability is affected by various fabrication-time and run-time effects. Fabrication-induced process variation has significant impact on circuit performance and reliability. Various aging effects, such as negative bias temperature instability, cause continuous performance and reliability degradation during circuit run-time usage. In this work, we present a statistical analysis framework that characterizes the lifetime reliability of nanometer-scale integrated circuits by jointly considering the impact of fabrication-induced process variation and run-time aging effects. More specifically, our work focuses on characterizing circuit threshold voltage lifetime variation and its impact on circuit timing due to process variation and the negative bias temperature instability effect, a primary aging effect in nanometer-scale integrated circuits. The proposed work is capable of characterizing the overall circuit lifetime reliability, as well as efficiently quantifying the vulnerabilities of individual circuit elements. This analysis framework has been carefully validated and integrated into an iterative design flow for circuit lifetime reliability analysis and optimization.
Assessment of Circuit Optimization Techniques Under NBTI

Xiaoming Chen,Yu Wang,Huazhong Yang,Yuan Xie,Yu Cao

DOI: https://doi.org/10.1109/MDAT.2013.2266651

2013-01-01

Abstract:This paper conducts a comprehensive study on existing circuit optimization techniques against NBTI, degradation mechanism that has become a critical reliability issue for nano-scaled IC design. These techniques are categorized by their intrinsic characteristics, and several important observations are made to give design guideline on NBTI mitigation.
Experimental Study on the Variation of NBTI Degradation in Nano-Scaled High-K/metal-gate PFETs

Changze Liu,Pengpeng Ren,Runsheng Wang,Ru Huang,Jianping Wang,Jingang Wu,Yangyuan Wang

DOI: https://doi.org/10.1109/icsict.2012.6466740

2012-01-01

Abstract:In this paper, the 2-D distribution of the power law time exponent (n) in NBTI degradation is experimentally studied in nanoscale high-K/metal-gate devices for the first time. By adopting the recently-proposed statistical trap-response (STR) technique, the distribution of n due to both device-to-device variation (DDV) and cycle-to-cycle variation (CCV) is taken into account. Large error (up to 80%) can be found without considering DDV or CCV in the evaluation of n. Moreover, the mean value and the variation of n distribution are further extracted and discussed with considering different extraction methods for accurate prediction of NBTI degradation in nanoscale devices and circuits.
Impact of Temporal Transistor Variations on Circuit Reliability.

Runsheng Wang,Yu Cao

DOI: https://doi.org/10.1109/iscas.2015.7169181

2015-01-01

Abstract:With the ever-increasing importance of temporal transistor variations during circuit run time and aging, this paper focuses on impacts of the two major temporal effects: the Bias Temperature Instability (BTI) and Random Telegraph Noise (RTN), illustrating their scaling trend, challenges, and potential solutions for future design robustness.
Impacts of Channel Doping on NBTI Reliability and Variability in Nanoscale FinFETs

Zhe Zhang,Runsheng Wang,Yangyuan Wang,Ru Huang

DOI: https://doi.org/10.1109/ipfa47161.2019.8984834

2019-01-01

Abstract:In this paper, the channel doping concentration (N ch ) dependence of negative bias temperature instability (NBTI) reliability and variability is comprehensively studied using `atomistic' TCAD simulations. The ΔV th distributions and current density distributions at different N ch are investigated. It is helpful for understanding of NBTI degradation in nanoscale devices.
Investigation of the NBTI induced mobility degradation for precise circuit aging simulation

Chenyue Ma,Xiangbin Li,Fu Sun,Lining Zhang,Xinnan Lin

DOI: https://doi.org/10.1109/INEC.2016.7589408

2016-01-01

Abstract:Ignoring the mobility degradation due to the negative bias temperature instability (NBTI) probably results in overestimation of the ON-state current This paper investigated the mobility degradation based on the universal NBTI model. Coulomb scattering is revealed as dominant component originated from the interface state generation. Mobility degradation plays a significant role in evaluating the threshold voltage shift due to the coupling effects of NBTI-HCI (hot carrier injection) and NBTI-SHE (self-heating effect).
Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Hong Luo,Yu Wang,Rong Luo,Huazhong Yang,Yuan Xie

DOI: https://doi.org/10.1587/transele.e92.c.875

2009-01-01

IEICE Transactions on Electronics

Abstract:Negative bias temperature instability (NBTI) has become a critical reliability phenomena in advanced CMOS technology. In this paper, we propose an analytical temperature-aware dynamic NBTI model, which can be used in two circuit operation cases: executing tasks with different temperatures, and switching between active and standby mode. A PMOS V-th degradation model and a digital circuits' temporal performance degradation estimation method are developed based on our NBTI model. The simulation results show that: 1) the execution of a low temperature task can decrease Delta V-th due to NBTI by 24.5%: 2) switching to standby mode can decrease Delta V-th by 52.3%; 3) for ISCAS85 benchmark circuits, the delay degradation can decrease significantly if the circuit execute low temperature task or switch to standby mode; 4) we have also observed the execution time's ratio of different tasks and the ratio of active to standby time both have a considerable impact on NBTI effect.
NBTI-aware Statistical Circuit Delay Assessment

Balaji Vaidyanathan,Anthony S. Oates,Yuan Xie,Yu Wang

DOI: https://doi.org/10.1109/isqed.2009.4810263

2009-01-01

Abstract:This work establishes an analytical model framework to account for the NBTI aging effect on statistical circuit delay distribution. In this paper, we explain how circuit NBTI mitigation techniques can account for this extra variability and further present the impact of statistical PMOS NBTI DC-lifetime variability on the product delay spread.

Understanding NBTI-induced Dynamic Variability in the Nano-Reliability Era: from Devices to Circuits

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Towards The Systematic Study Of Aging Induced Dynamic Variability In Nano-Mosfets: Adding The Missing Cycle-To-Cycle Variation Effects Into Device-To-Device Variation

New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Κ/metal-gate Technology for the Nano-Reliability Era

New Observations on AC NBTI Induced Dynamic Variability in Scaled High-Κ/metal-gate MOSFETs: Characterization, Origin of Frequency Dependence, and Impacts on Circuits

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Process Variation and Temperature-Aware Reliability Management

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

A Framework for Estimating NBTI Degradation of Microarchitectural Components

Impacts of cycle-to-cycle variation effects on the prediction of NBTI degradation and the resulted dynamic variations in high-к MOSFETs

Statistical Reliability Analysis under Process Variation and Aging Effects

Assessment of Circuit Optimization Techniques Under NBTI

Experimental Study on the Variation of NBTI Degradation in Nano-Scaled High-K/metal-gate PFETs

Impact of Temporal Transistor Variations on Circuit Reliability.

Impacts of Channel Doping on NBTI Reliability and Variability in Nanoscale FinFETs

Investigation of the NBTI induced mobility degradation for precise circuit aging simulation

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

NBTI-aware Statistical Circuit Delay Assessment