Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

New Observations on AC NBTI Induced Dynamic Variability in Scaled High-Κ/metal-gate MOSFETs: Characterization, Origin of Frequency Dependence, and Impacts on Circuits

New observations on AC NBTI induced dynamic variability in scaled high-κ/Metal-gate MOSFETs: Characterization, origin of frequency dependence, and impacts on circuits

Towards The Systematic Study Of Aging Induced Dynamic Variability In Nano-Mosfets: Adding The Missing Cycle-To-Cycle Variation Effects Into Device-To-Device Variation

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Impacts of cycle-to-cycle variation effects on the prediction of NBTI degradation and the resulted dynamic variations in high-к MOSFETs

New insights into AC RTN in scaled high-к / metal-gate MOSFETs under digital circuit operations

New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Κ/metal-gate Technology for the Nano-Reliability Era

Experimental Study on the Variation of NBTI Degradation in Nano-Scaled High-K/metal-gate PFETs

Understanding NBTI-induced Dynamic Variability in the Nano-Reliability Era: from Devices to Circuits

Insights into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate Pmosfets

Understand NBTI Mechanism by Developing Novel Measurement Techniques

An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method

Systematic Study on Predicting the Lifetime of Si pMOSFETs During NBTI Stress Based on Low-Frequency Noise.

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

A Comparative Study of TiN Thickness Scaling Impact on DC and AC NBTI Kinetics in Replacement Metal Gate Pmosfets

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Bias Temperature Instability Model Using Dynamic Defect Potential for Predicting CMOS Aging