Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Statistical Reliability Analysis under Process Variation and Aging Effects

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Process Variation and Temperature-Aware Reliability Management

Aging-Aware Gate-Level Modeling for Circuit Reliability Analysis

A Statistical Framework for Post-Fabrication Oxide Breakdown Reliability Prediction and Management

Computational Analysis of Mechanical and Electromigration Reliability Problems

Variation-aware gate sizing and clustering for post-silicon optimized circuits.

Reliability variability simulation methodology for IC design: An EDA perspective

System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown

A Machine Learning Based Reliability Analysis of Negative Bias Temperature Instability (NBTI) Compliant Design for Ultra Large Scale Digital Integrated Circuit

Concurrent device/circuit aging for general reliability simulations

Towards Reliability-Aware Circuit Design in Nanoscale FinFET Technology: — New-generation Aging Model and Circuit Reliability Simulator

Variation-aware Supply Voltage Assignment for Simultaneous Power and Aging Optimization

Modeling and Predicting Transistor Aging under Workload Dependency using Machine Learning

New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Κ/metal-gate Technology for the Nano-Reliability Era

Understanding NBTI-induced Dynamic Variability in the Nano-Reliability Era: from Devices to Circuits

Variability- and Reliability-Aware Design for 16/14nm and Beyond Technology

A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology

Accelerated Aging in Analog and Digital Circuits with Feedback

New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

Novel Critical Gate-Based Circuit Path-Level NBTI-Aware Aging Circuit Degradation Prediction.