Abstract:The pivotal issue of reliability is one of colossal concern for circuit designers. The driving force is transistor aging, dependent on operating voltage and workload. At the design time, it is difficult to estimate close-to-the-edge guardbands that keep aging effects during the lifetime at bay. This is because the foundry does not share its calibrated physics-based models, comprised of highly confidential technology and material parameters. However, the unmonitored yet necessary overestimation of degradation amounts to a performance decline, which could be preventable. Furthermore, these physics-based models are exceptionally computationally complex. The costs of modeling millions of individual transistors at design time can be evidently exorbitant. We propose the revolutionizing prospect of a machine learning model trained to replicate the physics-based model, such that no confidential parameters are disclosed. This effectual workaround is fully accessible to circuit designers for the purposes of design optimization. We demonstrate the models' ability to generalize by training on data from one circuit and applying it successfully to a benchmark circuit. The mean relative error is as low as 1.7%, with a speedup of up to 20X. Circuit designers, for the first time ever, will have ease of access to a high-precision aging model, which is paramount for efficient designs. This work is a promising step in the direction of bridging the wide gulf between the foundry and circuit designers.

Novel Critical Gate-Based Circuit Path-Level NBTI-Aware Aging Circuit Degradation Prediction.

A Machine Learning Based Reliability Analysis of Negative Bias Temperature Instability (NBTI) Compliant Design for Ultra Large Scale Digital Integrated Circuit

Aging-Aware Gate-Level Modeling for Circuit Reliability Analysis

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Implementation of Aging Mechanism Analysis and Prediction for XILINX 7-Series FPGAs with a 28-nm Process

Bias Temperature Instability Model Using Dynamic Defect Potential for Predicting CMOS Aging

A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology

Modeling and Predicting Transistor Aging under Workload Dependency using Machine Learning

A Novel Gate-Level Nbti Delay Degradation Model With Stacking Effect

Multi-View Graph Learning for Path-Level Aging-Aware Timing Prediction

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown

New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

Accelerated Aging in Analog and Digital Circuits with Feedback

A Fast Aging-aware Static Timing Analysis Prediction Frame of Digital Integrated Circuits

Concurrent device/circuit aging for general reliability simulations

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Gate Replacement Techniques For Simultaneous Leakage And Aging Optimization

Leakage Power and Circuit Aging Cooptimization by Gate Replacement Techniques

Statistical Reliability Analysis under Process Variation and Aging Effects

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation