Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation

Temperature-aware NBTI Modeling and the Impact of Input Vector Control on Performance Degradation

Modeling of PMOS NBTI Effect Considering Temperature Variation

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Nbti-Aware Dual V-Th Assignment for Leakage Reduction and Lifetime Assurance

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Impact of negative bias temperature instability on single event transients in scaled logic circuits

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

An Analytical Model for Negative Bias Temperature Instability

Model of NBTI combined with mobility degradation

NBTI-related issues in deep submicron pMOSFETs

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

Effects of Measurement Temperature on NBTI

Understand NBTI Mechanism by Developing Novel Measurement Techniques

A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negative Bias Temperature Instability Degradation

Investigation of the NBTI induced mobility degradation for precise circuit aging simulation

Circuit-Level Delay Modeling Considering Both Tddb And Nbti

Universal framework for temperature dependence prediction of the negative bias temperature instability based on microscope pictures

The Impact of Correlation Between NBTI and TDDB on the Performance of Digital Circuits