Abstract:Aging effects in digital circuits change the switching characteristics of their transistors, resulting in timing violations that can lead to functional errors at the system level. In particular, bias temperature instability (BTI) is a degradation effect that changes the threshold voltage of transistors. Its effect is more prevalent as the scaling of transistor dimensions progresses. In this work, we present a method to enable defect-centric long-term modeling of BTI degradation that takes into account the effects of concrete workloads at the processor data path level. Based on this study, we propose a novel design flow to link the impact of BTI degradation at the transistor ( ${Delta {}V_{text {th}}}$ ), processor data path (e.g., maximum frequency) and application-functionality levels. This flow may be used to improve system correctness over the entire device lifetime, avoiding unsafe working points, or to achieve a graceful degradation of system characteristics. Our design flow is applicable to all types of digital circuits, including high-performance processors. However, in this specific work we focus on the domain of biosignal processing applications for wireless body sensor networks (WBSNs), the pseudoperiodic nature of which interacts with the partially recoverable nature of BTI. Our results in this domain show, for a 32-nm implementation, a variation of up to 54.6 mV in the threshold voltage of the circuit transistors after one year of continuous operation, with an impact of 8.4% in the maximum safe operating frequency. Such effects are expected to strongly worsen for longer lifetimes and more scaled technology nodes.

The Impact of Correlation Between NBTI and TDDB on the Performance of Digital Circuits

Circuit-Level Delay Modeling Considering Both Tddb And Nbti

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Temperature-aware NBTI Modeling and the Impact of Input Vector Control on Performance Degradation

NBTI-aware Statistical Circuit Delay Assessment

Reliability Concerns on Time-to-digital Converter Due to Bias Temperature Instability in Nanometer Era

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Impact of BTI Aging Effect on Soft Error Rate of Combination Circuit

Synergistic Effect of BTI and Process Variations on the Soft Error Rate Estimation in Digital Circuits

Synergistic Effect of BTI and Process Variations on Impact and Monitoring of Combination Circuit

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Impact of negative bias temperature instability on single event transients in scaled logic circuits

NBTI-Aware Transient Fault Rate Analysis Method for Logic Circuit Based on Probability Voltage Transfer Characteristics

Modeling of PMOS NBTI Effect Considering Temperature Variation

Impact of Temporal Transistor Variations on Circuit Reliability.

Analysis of Functional Errors Produced by Long-Term Workload-Dependent BTI Degradation in Ultralow Power Processors

Understanding the correlation of HCI and NBTI degradation in pLDMOSFETs from MR-DCIV technique

On the efficacy of input Vector Control to mitigate NBTI effects and leakage power