Abstract:With the downscaling of CMOS devices, dynamic variability induced by negative bias temperature instability (NBTI) has become a critical issue. In addition to the time-dependent device-to-device variation (DDV) of NBTI degradation, the cycle-to-cycle variation (CCV) originated from random trap occupation is found non-negligible and should be added into the total dynamic variation. This paper summarizes our recent studies on NBTI-induced dynamic variability, focusing on the CCV effect, with more details on the statistical modeling, circuit reliability simulation methodologies and experimental results. By adding the random trap occupation into consideration, a statistical model for total dynamic variation (DDV+CCV) is proposed. The effective occupancy probability peff is introduced as a key parameter for modeling and circuit reliability simulation. With the statistical trap response (STR) method and modified on-the-fly method, the proposed model is validated by the experimental evidence under both DC and AC NBTI. According to the model and experimental results, circuit reliability simulation framework is proposed for both long-term quasi-static and short-term transient performance evaluation with the additional impact of CCV. Two representative digital circuit units, ring oscillator (RO) and SRAM cell, are simulated under different conditions, indicating it necessary to consider the evident influence of the CCV in accurate circuit reliability evaluation. The results are helpful for the reliability/variability-aware circuit design in nanoscale technology.

A Novel Gate-Level Nbti Delay Degradation Model With Stacking Effect

Circuit-Level Delay Modeling Considering Both Tddb And Nbti

Modeling of PMOS NBTI Effect Considering Temperature Variation

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation

Temperature-aware NBTI Modeling and the Impact of Input Vector Control on Performance Degradation

Novel Critical Gate-Based Circuit Path-Level NBTI-Aware Aging Circuit Degradation Prediction.

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks

NBTI-aware Statistical Circuit Delay Assessment

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

The Threshold Voltage Degradation Model of N Channel VDMOSFETs under PBT Stress

New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Κ/metal-gate Technology for the Nano-Reliability Era

Impacts of cycle-to-cycle variation effects on the prediction of NBTI degradation and the resulted dynamic variations in high-к MOSFETs

Model of NBTI combined with mobility degradation

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability Simulation

Some issues in advanced CMOS gate stack performance and reliability

Predictive As-Grown-Generation (A-G) Model For Bti-Induced Device/Circuit Level Variations In Nanoscale Technology Nodes

Experimental Study on the Variation of NBTI Degradation in Nano-Scaled High-K/metal-gate PFETs

System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown

Insights into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate Pmosfets