Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

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Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device.

Understand NBTI Mechanism by Developing Novel Measurement Techniques

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Understanding the correlation of HCI and NBTI degradation in pLDMOSFETs from MR-DCIV technique

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Assessment of BTI‐induced deterioration in vacuum based undoped structure

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New Insights of Bti Degradation in Mosfets with Sion Gate Dielectrics

A New Model for Two-Dimensional Electrical-Field-Dependent $v_{\rm Th}$ Instability of Pmosfets with Ultrathin DPN Gate Dielectrics

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs

Statistical Observations of Three Co-Existing NBTI Behaviors in 28 Nm HKMG by On-Chip Monitor with Less Recovery Impact.

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Insight into PBTI in InGaAs nanowire FETs with Al<inf>2</inf>O<inf>3</inf> and LaAlO<inf>3</inf> gate dielectrics