Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs

Correlation of I<inf>d</inf>- and I<inf>g</inf>-random Telegraph Noise to Positive Bias Temperature Instability in Scaled High-&Amp;#x03ba;/metal Gate N-Type MOSFETs

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

New Insights of Bti Degradation in Mosfets with Sion Gate Dielectrics

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Understand NBTI Mechanism by Developing Novel Measurement Techniques

High-K Shallow Traps Observed by Charge Pumping with Varying Discharging Times