Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions

Trap Dynamics Based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs

Investigation of Degradation under Arbitrary Bias Conditions in HfO2 Based Nanosheet Nfets by 3D Kinetic Monte-Carlo Method

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Investigation of PBTI Degradation in Nanosheet nFETs With HfO 2 Gate Dielectric by 3D-KMC Method

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

The identification of traps in HfO 2 -based FeFET with SiON as an interlayer using current transient method

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Experimental Study on the Oxide Trap Coupling Effect in Metal Oxide Semiconductor Field Effect Transistors with HfO2 Gate Dielectrics

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations