Abstract:The distribution of fractional current change and threshold voltage shift in an ensemble of realistic 35 nm bulk negative-channel metal-oxide-semiconductor field-effect transistors caused by charge trapping on stress-generated defect states at the Si/SiO2 interface is studied using 3-D statistical ¿atomistic¿ simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps could result in rare but dramatic changes in the transistor characteristics. The evolution of threshold voltage distribution as a result of accumulation of trapped charges in the devices due to progressive negative bias temperature instability, positive bias temperature instability, or hot electron degradation is simulated and compared with simple analytical model predictions and recently published experimental measurements to demonstrate the necessity to consider statistical variability in realistic reliability simulations. The magnitude of the degradation in devices of different geometries is also investigated where minimal correlation is found.

Trap Dynamics Based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs

Entire Bias Space Statistical Reliability Simulation by 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs Based Circuits

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

Degradation Investigation of High-k/Metal Gate Nmosfets by 3D KMC with Multiple Traps Interactions

3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method

Efficient Variability- And Reliability-Aware Device-Circuit Co-Design: From Trap Behaviors To Circuit Performance

Investigation of Degradation under Arbitrary Bias Conditions in HfO2 Based Nanosheet Nfets by 3D Kinetic Monte-Carlo Method

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

Self-heating Aware EM Reliability Prediction of Advanced CMOS Technology by Kinetic Monte Carlo Method

Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs

Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations

Simulation of Statistical Aspects of Reliability in Nano CMOS Transistors

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

Simulation of "ab Initio" Quantum Confinement Scattering in Utb Mosfets Using Three-Dimensional Ensemble Monte Carlo

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Simulation study of trap-induced noise characteristics in FDSOI MOSFETs

New Understanding on the Single-Trap Response under NBTI Stress and the Resulted Stochastic Degradation in Nanoscale MOSFETs