Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Understanding Hot Carrier Degradation and Variation in FinFET Technology

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)

Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings

Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology

Advanced Compact Modeling for Transistor Aging: Trap-based Approaches and Mixed-mode Coupling

Investigation of Interplays Between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs

Hot Carrier Injection Reliability in Nanoscale Field Effect Transistors: Modeling and Simulation Methods

Investigation on the Lateral Trap Distributions in Nanoscale MOSFETs During Hot Carrier Stress

Deep Understanding of Reliability in Hf-based FeFET During Bipolar Pulse Cycling: Trap Profiling for Read-After-Write Delay and Memory Window Degradation

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 Nm Si FinFET

Investigation Of Dibl Degradation In Nanoscale Finfets Under Various Hot Carrier Stresses

A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs