Abstract:In this paper, the underlying physics of interface trap generation in CMOS devices are revealed, by using full-band distribution of H atom electronic resonance states in Si-H bond at Si/SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interface, instead of previously assumed single resonance level. The idea is verified and quantified by advanced time-dependent DFT (TDDFT) calculations. Based on this, the hot carrier degradation can be well modeled to surprisingly cover a broad range of technologies and stress conditions, due to the multiple peaks found in the full-band resonance states, and a TCAD simulation flow is proposed. The model is experimentally validated, from classic region (130nm Planar) to advanced region (16/14nm FinFET) and extendable to GAA, covering both (100) & (110) and n & p channels with various V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf> /V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> bias conditions. This work provides a universal understanding and efficient simulation framework for the hot carrier reliability.

Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology

Investigation of Interplays Between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs

Body Bias Dependence Of Hot Carrier Degradation (Hcd) In Advanced Finfet Technology

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Understanding Hot Carrier Degradation and Variation in FinFET Technology

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings

On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)

GHz Cycle-to-Cycle Variation in Ultra-scaled FinFETs: from the Time-Zero to the Aging States.

Investigation on the Lateral Trap Distributions in Nanoscale MOSFETs During Hot Carrier Stress

Investigation Of Dibl Degradation In Nanoscale Finfets Under Various Hot Carrier Stresses

Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling

Body Bias Dependence of Bias Temperature Instability (BTI) in Bulk FinFET Technology

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Comprehensive understanding of hot carrier degradation in multiple-fin SOI FinFETs

Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron Soi Pmosfets