Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)

Re-Examination of Hot Carrier Degradation Mechanism in Ultra-Scaled nFinFETs

Understanding Hot Carrier Degradation and Variation in FinFET Technology

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Investigation of Interplays Between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs

Investigation on the Lateral Trap Distributions in Nanoscale MOSFETs During Hot Carrier Stress

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings

Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel P-Finfets.

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Body Bias Dependence Of Hot Carrier Degradation (Hcd) In Advanced Finfet Technology

Impact of Interface Trap Density on the Endurance of HFO<inf>2</inf>/SI FEFETS

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Investigation Of Dibl Degradation In Nanoscale Finfets Under Various Hot Carrier Stresses