An Improved Method to Extract Generation of Interface Trap in Hot-Carrier-Stressed LDD n-MOSFET

Guoyong Yang,Lingfeng Mao,Jinyan Wang,Zongliang Huo,Ziou Wang,Mingzhen Xu,Changhua Tan

DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.08.005

2003-01-01

Abstract:A new improved technique,based on the direct-current current-voltage and charge pumping methods,is proposed for measurements of interface traps density in the channel and the drain region for LDD n-MOSFET.This technique can be applied to virgin samples and those subjected to hot carrier stress,and the latter are known to cause the interface damage in the drain region and the channel region.The generation of interface traps density in the channel region and in the drain region can be clearly distinguished by using this technique.