On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric
W. J. Liu,Z. Y. Liu,Daming Huang,C. C. Liao,L. F. Zhang,Z. H. Gan,Waisum Wong,C. Shen,Ming-Fu Li
DOI: https://doi.org/10.1109/IEDM.2007.4419072
2007-01-01
Abstract:For the first time, we developed an on-the-fly method OFIT to measure the interface trap density NIT without recovery during measurement. The OFIT produces the most reliable experimental data of the interface trap generation dynamics under stress and therefore provides a solid ground to check various modeling work. The slope n of t(n) time evolution of Delta N-IT under stress is temperature dependent, supporting dispersive Hydrogen transport in the oxide. Comparing OFIT data with the data measured by ultra-fast pulsed V-th measurement, we successfully decompose the NBTI Delta V-TH into interface trap component Delta V-TH(IT) and oxide charge component Delta V-TH(OX) quantitatively for the p-MOSFETs with SiON gate dielectric.