Abstract:Although the body diode of SiC MOSFET has excellent surge capability, the reliability issues about commercial SiC MOSFET under repetitive surge current stress of body diode haven't been studied thoroughly. In this work, repetitive surge current stress is applied to the body diode of commercial SiC trench MOSFET, and the surge tests are conducted under different gate biases and ambient temperatures. It is found that no bipolar degradation occurs in the body diode but degradation phenomena of gate oxide and package are observed in devices under tests (DUTs). At room temperature, the threshold voltage (VT8) related to gate oxide degradation degrades more seriously at a negative gate bias of -5V than at 0V. At 0V gate bias, gate oxide and package degenerate more severely at /25°C than at 25°C. The evolution of on-state resistance (R DSON ) during the tests is influenced by the competitive mechanism between gate oxide degradation and package degradation. As a result, gate oxide degradation causes R DSON to reduce while package degradation makes R DSON rise. Meanwhile, the competitive mechanism is deeply influenced by the gate bias voltage and ambient temperature. The failure analysis shows that all DUTs fail with gate and source terminal shorted, which is mainly attributed to high junction temperature.

FinFET Reliability Analysis by Forward Gated-Diode Method

Finfet Reliability Issue Analysis by Forward Gated-Diode Method

FinFET Reliability Study by Forward Gated-Diode Generation–recombination Current

FinFET reliability study by forward gated-diode method

Extracting F-N Stress-Induced Interface States In Soinmosfet'S By Forward Gated-Diode

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

Application of forward gated-diode R–G current method in extracting F–N stress-induced interface traps in SOI NMOSFETs

Forward Gated-Diode Method for Directly Measuring Stress-Induced Interface Traps in NMOSFET/SOI

Interconnection Reliability on FinFET Devices

Forward Gated-Diode Monitoring of F-N Stressing-Induced Interface Traps of NMOSFET/SOI

Forward Gated-Diode R-G Current Method For Characterizing The Lateral Lightly Doping Region Of The Nmosfet/Soi

Clear Correspondence Between Gated-Diode R-G Current and Performance Degradation of Soi N-Mosfets after F-N Stress Tests

New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs

Forward Gated-Diode R-G Current Method: A Simple Novel Technique for Characterizing Lateral Lightly Doping Region of LDD MOSFET’s

Suppression of Stress-Induced Defects in FinFET by Implantation and STI Co-Optimization

Forward Gated-Diode Method For Parameter Extraction Of Mosfets

Correlation between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress test

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

New Insights into the HCI Degradation of Pass-Gate Transistor in Advanced FinFET Technology.