New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs

Jin He,Xing Zhang,Ru Huang,Yangyuan WANG

DOI: https://doi.org/10.3969/j.issn.1674-4926.2002.01.003

2002-01-01

Abstract:The front gate interface-and oxide-traps induced by hot-carrier-stress in SOI-NMOSFETs are studied.Based on a new forward gated-diode technique,the R-G current originating from the front interface traps is measured,and then the densities of the interface-and oxide-traps are separated independently.The experimental results show that the hot-carrier-stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot-carrier-stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot-carrier-stress on the generating of interface-and oxide-traps,which help to understand the degradation and reliability of the SOI-MOSFETs.