Abstract:The changes of interface trap density and distribution at the Si/SiO 2 interface in partially depleted SOI MOSFETs were investigated by direct-current current–voltage (DCIV) method before and after Fowler–Nordheim tunnelling stress condition. The equivalent density and energy level of interface trap were obtained by combining the DCIV measurement results with the theoretical calculation using the least square method. It is concluded that the interface trap density increased as applying F–N stress due to the generation of Si dangling bond and the trapped charge at the Si/SiO 2 interface, and the equivalent energy level of interface trap become close to the midgap with stress time increasing. In addition, interface trap density N IT as a function of their energy level E IT can be achieved, which were typical “U-shape” curves, and the interface trap density near midgap increases obviously as the F–N stress time increasing. An effective method is proposed to evaluate the interface state of SOI devices suffered electrical stress or other damages.

Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs

Application of forward gated-diode R–G current method in extracting F–N stress-induced interface traps in SOI NMOSFETs

Forward Gated-Diode Method for Directly Measuring Stress-Induced Interface Traps in NMOSFET/SOI

New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs

Hot Carrier-Induced Interface Traps in N-Channel MOSFET/SOI Characterized by a Forward Gated-Diode Technique

Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

Extracting F-N Stress-Induced Interface States In Soinmosfet'S By Forward Gated-Diode

Forward Gated-Diode Monitoring of F-N Stressing-Induced Interface Traps of NMOSFET/SOI

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Forward Gated-Diode R-G Current Method For Characterizing The Lateral Lightly Doping Region Of The Nmosfet/Soi

Method For Direct Characterizing Interface Traps In Sti-Type High Voltage Soi Ldmosfets

An Improved Method to Extract Generation of Interface Trap in Hot-Carrier-Stressed LDD n-MOSFET

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Investigation of Interface Traps at Si/SiO2 Interface of SOI Pmosfets Induced by Fowler–Nordheim Tunneling Stress Using the DCIV Method

Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Forward Gated-Diode R-G Current Method: A Simple Novel Technique for Characterizing Lateral Lightly Doping Region of LDD MOSFET’s

An Accurate Method To Extract And Separate Interface And Gate Oxide Traps By The Mosfet Subthreshold Current

Clear Correspondence Between Gated-Diode R-G Current and Performance Degradation of Soi N-Mosfets after F-N Stress Tests