Abstract:The changes of interface trap density and distribution at the Si/SiO 2 interface in partially depleted SOI MOSFETs were investigated by direct-current current–voltage (DCIV) method before and after Fowler–Nordheim tunnelling stress condition. The equivalent density and energy level of interface trap were obtained by combining the DCIV measurement results with the theoretical calculation using the least square method. It is concluded that the interface trap density increased as applying F–N stress due to the generation of Si dangling bond and the trapped charge at the Si/SiO 2 interface, and the equivalent energy level of interface trap become close to the midgap with stress time increasing. In addition, interface trap density N IT as a function of their energy level E IT can be achieved, which were typical “U-shape” curves, and the interface trap density near midgap increases obviously as the F–N stress time increasing. An effective method is proposed to evaluate the interface state of SOI devices suffered electrical stress or other damages.

Extracting F-N Stress-Induced Interface States In Soinmosfet'S By Forward Gated-Diode

Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

Forward Gated-Diode Monitoring of F-N Stressing-Induced Interface Traps of NMOSFET/SOI

Application of forward gated-diode R–G current method in extracting F–N stress-induced interface traps in SOI NMOSFETs

Forward Gated-Diode Method for Directly Measuring Stress-Induced Interface Traps in NMOSFET/SOI

Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs

Investigation of Interface Traps at Si/SiO2 Interface of SOI Pmosfets Induced by Fowler–Nordheim Tunneling Stress Using the DCIV Method

New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

Clear Correspondence Between Gated-Diode R-G Current and Performance Degradation of Soi N-Mosfets after F-N Stress Tests

Hot Carrier-Induced Interface Traps in N-Channel MOSFET/SOI Characterized by a Forward Gated-Diode Technique

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

Correlation between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress test

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

FinFET Reliability Analysis by Forward Gated-Diode Method

Finfet Reliability Issue Analysis by Forward Gated-Diode Method

Forward Gated-Diode R-G Current Method For Characterizing The Lateral Lightly Doping Region Of The Nmosfet/Soi

Linear Cofactor Difference Method of MOSFET Subthreshold Characteristics for Extracting Interface Traps Induced by Gate Oxide Stress Test