Abstract:A clear correspondence between the gated-diode generation-recombination (R-G) current and the performance degradation of an SOI n-channel MOS transistor after F-N stress tests has been demonstrated. Due to the increase of interface traps after F-N stress tests, the R-G current of the gated-diode in the SOI-MOSFET architecture increases while the performance characteristics of the MOSFET transistor such as the saturation drain current and sub-threshold slope are degraded. From a series of experimental measurements of the gated-diode and SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold voltage as well as a like-line rise of the sub-threshold swing and a corresponding degradation in the trans-conductance are also observed. These results provide theoretical and experimental evidence for us to use the gated-diode tool to monitor SOI-MOSFET degradation.

Forward Gated-Diode R-G Current Method For Characterizing The Lateral Lightly Doping Region Of The Nmosfet/Soi

Forward Gated-Diode R-G Current Method: A Simple Novel Technique for Characterizing Lateral Lightly Doping Region of LDD MOSFET’s

Application of forward gated-diode R–G current method in extracting F–N stress-induced interface traps in SOI NMOSFETs

Forward Gated-Diode Method for Directly Measuring Stress-Induced Interface Traps in NMOSFET/SOI

Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs

New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Gated-Diode Recombination-Generation Current: A Sensitive Tool For Characterizing Bulk Traps Of Soi Devices

Forward Gated-Diode Method For Parameter Extraction Of Mosfets

Parameter extraction of nano-scale MOSFET by a forward gated-diode method

Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

Forward Gated-Diode Monitoring of F-N Stressing-Induced Interface Traps of NMOSFET/SOI

Extracting F-N Stress-Induced Interface States In Soinmosfet'S By Forward Gated-Diode

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI NMOSFETs

Method For Direct Characterizing Interface Traps In Sti-Type High Voltage Soi Ldmosfets

Clear Correspondence Between Gated-Diode R-G Current and Performance Degradation of Soi N-Mosfets after F-N Stress Tests

Multiregion DCIV: A Sensitive Tool for Characterizing the $\hbox{Si/SiO}_{2}$ Interfaces in LDMOSFETs

FinFET Reliability Analysis by Forward Gated-Diode Method

An Improved Method to Extract Generation of Interface Trap in Hot-Carrier-Stressed LDD n-MOSFET

Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric