Abstract:The SiC/SiO 2 interface state is one of the main factors that limit the performance and reliability of the SiC metal–oxide–semiconductor field-effect transistor (MOSFET). In this article, we use a Bayesian deconvolution algorithm to optimize trap feature extraction based on the transient current method and improve the trap extraction accuracy. Using this method, we study the trap capture mechanism in SiC MOSFETs and mainly characterize the trap position, the trap energy level, and the capture time constant. The results obtained show that there are three different types of traps and defects, two of which are SiC interface traps at the gate–source and gate–drain interfaces, with activation energies of 0.089 and 0.035 eV, respectively, and the third trap type is an oxide trap, and its time constant does not vary with temperature. The characterization results are verified via deep-level transient spectroscopy, and the results show reasonable agreement with those obtained by the method proposed in this article. This method can be combined with electrical stress testing in long-term reliability research to realize nondestructive characterization of the defects of SiC MOSFETs.

Multiregion DCIV: A Sensitive Tool for Characterizing the $\hbox{Si/SiO}_{2}$ Interfaces in LDMOSFETs

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Multi-Region Dciv Spectroscopy and Impacts on the Design of Sti-Based Ldmosfets

A Multi-Region Trap Characterization Method and Its Reliability Application on STI-based High-Voltage LDMOSFETs

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Investigation of Interface Traps at Si/SiO2 Interface of SOI Pmosfets Induced by Fowler–Nordheim Tunneling Stress Using the DCIV Method

High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability

Forward Gated-Diode R-G Current Method For Characterizing The Lateral Lightly Doping Region Of The Nmosfet/Soi

Correlation Between MR-DCIV Current and High-Voltage-stress-induced Degradation in LDMOSFETs

Method For Direct Characterizing Interface Traps In Sti-Type High Voltage Soi Ldmosfets

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV Spectroscopy

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Understanding the correlation of HCI and NBTI degradation in pLDMOSFETs from MR-DCIV technique

Forward Gated-Diode R-G Current Method: A Simple Novel Technique for Characterizing Lateral Lightly Doping Region of LDD MOSFET’s

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps under DC/ AC NBTI Stress/Recovery Condition in Si P-Finfets

Extracting F-N Stress-Induced Interface States In Soinmosfet'S By Forward Gated-Diode

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology