Abstract:The trigger voltage walk-in effect has been investigated by designing two different laterally diffused metal—oxide—semiconductor (LDMOS) transistors with an embedded silicon controlled rectifier (SCR). By inserting a P+ implant region along the outer and the inner boundary of the N+ region at the drain side of a conventional LDMOS transistor, we fabricate the LDMOS-SCR and the SCR-LDMOS devices with a different triggering order in a 0.5 μm bipolar-CMOS-DMOS process, respectively. First, we perform transmission line pulse (TLP) and DC-voltage degradation tests on the LDMOS-SCR. Results show that the trigger voltage walk-in effect can be attributed to the gate oxide trap generation and charge trapping. Then, we perform TLP tests on the SCR-LDMOS. Results indicate that the trigger voltage walk-in effect is remarkably reduced. In the SCR-LDMOS, the embedded SCR is triggered earlier than the LDMOS, and the ESD current is mainly discharged by the parasitic SCR structure. The electric potential between the drain and the gate decreases significantly after snapback, leading to decreased impact ionization rates and thus reduced trap generation and charge trapping. Finally, the above explanation of the different trigger voltage walk-in behavior in LDMOS-SCR and SCR-LDMOS devices is confirmed by TCAD simulation.

A Multi-Region Trap Characterization Method and Its Reliability Application on STI-based High-Voltage LDMOSFETs

High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability

Method For Direct Characterizing Interface Traps In Sti-Type High Voltage Soi Ldmosfets

Multi-Region Dciv Spectroscopy and Impacts on the Design of Sti-Based Ldmosfets

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV Spectroscopy

Multiregion DCIV: A Sensitive Tool for Characterizing the $\hbox{Si/SiO}_{2}$ Interfaces in LDMOSFETs

Study of the Degradation in LDMOS with STI Technology and Improve the Reliability with Several Methods

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Correlation Between MR-DCIV Current and High-Voltage-stress-induced Degradation in LDMOSFETs

Understanding the correlation of HCI and NBTI degradation in pLDMOSFETs from MR-DCIV technique

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Understanding of HCI degradation temperature dependence in SOI STI-pLDMOSFETs from MR-DCIV spectroscopy

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

An Improved Method to Extract Generation of Interface Trap in Hot-Carrier-Stressed LDD n-MOSFET

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Investigation of Interface Traps at Si/SiO2 Interface of SOI Pmosfets Induced by Fowler–Nordheim Tunneling Stress Using the DCIV Method

A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique