Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology
P He,B Jiang,X Lin,LT Liu,LL Tian,ZJ Li,YM Dong,M Chen,X Wang
DOI: https://doi.org/10.1016/s0038-1101(02)00466-5
IF: 1.916
2003-01-01
Solid-State Electronics
Abstract:To overcome the floating-body effect and self-heating effect of SOI devices, the drain and source on insulator (DSOI) structure [IEEE Int. Solid-State Integr. Circ. Technol. Conf. Proc., 1998, p. 575] is fabricated and tested. The recently developed low dose and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices. Using this method, DSOI, SOI and bulk MOSFETs are successfully integrated on a single chip. Test results show that the drain induced barrier lowering effect is greatly suppressed and the drain-to-source breakdown voltage is greatly increased for DSOI devices due to the elimination of the floating-body effect. And the self-heating effect is also reduced and thus the reliability increased. At the same time, the advantage of SOI devices in speed is maintained. The technology makes it possible to integrate low voltage, low power, low speed SOI devices and high voltage, high power, high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.