Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Reliability Improvements in SOI-like MOSFET with ESD and Self-Heating Effect

Fabrication Of Self-Aligned Drain And Source On Insulator Mosfet With Dielectric Pocket By Local Simox Technology

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

Super Junction LDMOS with P-trench and Stepped Buried Oxide Layer for High Performance

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Extra Source Implantation for Suppression Floating-Body Effect in Partially Depleted SOI MOSFETs

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

A Simulation Study of Soi-Like Bulk Silicon Mosfet with Improved Performance

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

Improved Super Junction LDMOS Transistors on Thin Film SOI to Suppress Substrate-assisted Depletion Effects

TDBC SOI Technology to Suppress Floating Body Effect in PD SOI P-Mosfets

A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs

A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

Suppress of Substrate-Assisted Depletion Effects in Super Junction LDMOS on Thin Film SOI

An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs