Abstract:This research introduces a new designing process and analysis of an innovative Silicon-on-Insulator Metal-Semiconductor Field-Effect (SOI MESFET) structure that demonstrates improved DC and RF characteristics. The design incorporates several modifications to control and reduce the electric field concentration within the channel. These modifications include relocating the transistor channel to sub-regions near the source and drain, adjusting the position of the gate electrode closer to the source, introducing an aluminum layer beneath the channel, and integrating an oxide layer adjacent to the gate. The results show that the AlOx-MESFET configuration exhibits a remarkable increase of 128% in breakdown voltage and 156% in peak power. Furthermore, due to enhanced conductivity and a significant reduction in gate-drain capacitance, there is a notable improvement of 53% in the cut-off frequency and a 28% increase in the maximum oscillation frequency. Additionally, the current gain experiences a boost of 15%. The improved breakdown voltage and peak power make it suitable for applications requiring robust performance under high voltage and power conditions. The increased maximum oscillation frequency and cut-off frequency make it ideal for high-frequency applications where fast signal processing is crucial. Moreover, the enhanced current gain ensures efficient amplification of signals. The introduced SOI MESFET structure with its modifications offers significant improvements in various performance metrics. It provides high oscillation frequency, better breakdown voltage and good cut-off frequency, and current gain compared to the traditional designs. These enhancements make it a highly desirable choice for applications that demand high-frequency and high-power capabilities.

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application

Research on low power technology based on Multi Bit Flip Flop

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

Soi Power Devices

A Path to Energy Efficiency and Reliability for ICs: Fully Depleted Silicon-on-Insulator (FD-SOI) Devices Offer Many Advantages

Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Characterization of DC, Analog/rf, and Low Frequency Noise in Silicon-on-insulator Nmosfets with Different Body-Contact Structures

The Localized-SOI MOSFET as a Candidate for Analog/RF Applications

T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

Design Methodology Of Cmos Low Power

Scaling capability and design guidelines of a nano-scale quasi-SOI device for low operation power and high-performance applications

RF Performance and Scaling Capability of Thin-body GOI and SOI MOSFETs

Design Guideline of an Ultra-Thin Body SOI MOSFET for Low-Power and High-Performance Applications

Fabrication and Characterization of High Speed SOI MOS Devices and Ring-Oscillators

Design Considerations Of Ultra-Thin Body Soi Mosfets

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET