Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

Fabrication and Characterization of High Speed SOI MOS Devices and Ring-Oscillators

A Low- Power CMOS Ring- Based Oscillator Using Current Steering Logic Structure

Development of low-voltage and high-speed CMOS/SIMOX devices and circuits

The Investigation of Key Technologies for Sub-0.1-μm CMOS Device Fabrication

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

High Performance 70 Nm Cmos Device and Key Technologies

Optical Signal Processing in SOI Waveguide Devices

Fabrication and Characterization of Silicon Photonic Waveguides and Devices Via Selective Oxidation Process

Optoelectronic Oscillator Based on a Silicon Microring Modulator

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application

Concentric Silicon Micro-Ring Resonators with Enhanced Transmission Notch Depth

Advantages and challenges of high performance CMOS on SOI

SOI Based Optical Waveguide Devices with 44gbit/s High Speed

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Fabrication of Silicon Photonic Devices by Utilizing Industrial CMOS Technology

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

SOI CMOS technology for RF/MMIC applications - yes or no?

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Study of full isolation SOI technology by highly selective and self-stopping formation of porous oxidized silicon