Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

High Performance 70 Nm Cmos Device and Key Technologies

The Investigation of Key Technologies for Sub-0.1-μm CMOS Device Fabrication

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

High performance gate length 22 nm CMOS device with strained channel and EOT 1.2 nm

(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications

Ge CMOS Technology with Advanced Interface and Junction Engineering.

CMOS Technology for the Nanometer Regime

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

III-V/Ge CMOS Device Technologies for High Performance Logic Applications

Development of low-voltage and high-speed CMOS/SIMOX devices and circuits

Fabrication and Characterization of High Speed SOI MOS Devices and Ring-Oscillators

Novel Devices and Process for 32 Nm CMOS Technology and Beyond

Development of thin film submicron CMOS/SOS technology and its devices

Extended 0.13 /spl mu/m CMOS technology for the ultra high-speed and MS/RF application segments

An Overview of New Design Techniques for High Performance CMOS Millimeter-Wave Circuits.

Keynote; Material Challenges and Opportunities in Ge/III-V Channel MOSFETs

III–V/Ge channel MOS device technologies in nano CMOS era

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3