Abstract:In this paper, we report high-speed ultrathin-body (3.5 nm) indium-tin-oxide (ITO) transistors using high-k HfLaO dielectrics with a thickness of 5 nm. Because of its low dielectric constant and large bandgap, ITO is a promising channel material for scaling below the 5 nm regime for advanced low-power electronics with excellent short-channel-immunity. Here, we fabricate sub-100-nm channel length ITO transistors with ultrahigh on/off ratio near 10 11 and ultralow off-state current below 10 fA/μm. The 15-nm-long ITO transistor exhibits high performance with the maximum on-state current of 970 μA/μm and peak g m of 400 μS/μm at V ds = 0.5 V. NAND, NOR, and SRAM based on enhancement/depletion mode (E/D) inverters have achieved full rail-to-rail output characteristics and stable memory function. Finally, We demonstrated a stage delay of 0.49 ns/stage for a 5-stage ring oscillator based on bootstrapped mode (BST) inverter, which is the best among all results based on metal-oxides transistors.

Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

Design and optimization of the ring oscillator based injection locked frequency dividers.

A Low- Power CMOS Ring- Based Oscillator Using Current Steering Logic Structure

High-Speed Ring Oscillator Using Skewed Delay Scheme Integrated by Metal-Oxide TFTs

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

The Implementation of Fundamental Digital Circuits with ITO-Stabilized ZnO TFTs for Transparent Electronics

Fabrication and performance of indium oxide based transparent thin film transistors

Fabrication and Characterization of High Speed SOI MOS Devices and Ring-Oscillators

Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

A Differential Ring Oscillator With Tail Current Source Control Scheme Using N-Type Oxide TFTs

Performance Improvement Induced by Metal Gate Undercut for Ring Oscillator

A Low-Power Ring Oscillator Using Pull-Up Control Scheme Integrated by Metal–Oxide TFTs

Beol Compatible 15-Nm Channel Length Ultrathin Indium-Tin-Oxide Transistors With I-On=970 Mu A/Mu M And On/Off Ratio Near 10(11) At V-Ds=0.5 V

A 0.08%/V 32.3-Ppm/ $^{\circ}$ C 36.6-Khz Unregulated Current-Reuse Ring Oscillator with $v_{\mathrm{gs}}$ -Ratio-based Compensation Using One-Type-Only Resistor

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I on = 970 μA/μm and On/off Ratio Near 10 11 at V ds = 0.5 V

A Current Steering Logic Based Ring Oscillator For High Stability And Lower Noise Applications

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I<inf>on</inf> = 970 μA/μm and On/off Ratio Near 10<sup>11</sup> at V<inf>ds</inf> = 0.5 V

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing