Abstract:Herein, excellent electrical performances were achieved for the oxidized-silicon-terminated (C–Si–O) diamond metal–oxide–semiconductor field-effect transistors (MOSFETs) using chemical-vapor-deposition grown SiO2 as the filling insulator of shallow-trench-isolation (STI) structures and gate oxide. The C–Si–O interface was formed under the initial SiO2 layer ( $1^{\text {st}}$ SiO $_{{2}}{)}$ as a mask during heavily boron-doping growth. The surface carbon-rich layer formed on the mask during selective diamond regrowth was removed using the oxygen plasma ashing treatment. The device having a 130-nm-thick SiO2 gate insulator exhibited subthreshold slopes (S S) of 220–710 mV/dec between 473 and 673 K. A normally-off operation was confirmed at 673 K. The SiO2filling insulator ( $2^{\text {nd}}$ SiO $_{{2}}{)}$ containing positive fixed charges can block the hole transport channels, and the active regions of the device are out of one plane using the STI structures. Accordingly, OFF-state drain leakage current was successfully suppressed. Consequently, high on–off ratios of $10^{{6}}$ – $10^{{7}}$ that cannot be realized in hydrogen-terminated (C–H) diamond FETs were confirmed up to 673 K. To summarize, results of this study provide new strategies for advancing diamond devices from the laboratory to industrial applications.

Study of full isolation SOI technology by highly selective and self-stopping formation of porous oxidized silicon

Ultra-thin-film silicon-on-insulator structure fabricated by using oxidizing porous silicon technology

Ultra-Thin-Film Silicon-On-Insulator Structure Using Oxidized Porous Silicon

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Oxidized-silicon-terminated Diamond p-FETs with SiO 2 -fiNing Shallow Trench Isolation Structures

Fully depleted SOI devices with TiN gate and elevated source-drain structures

Novel SOI technology - H+ implantation, bonding and separation

Study of the Heavy Metal Gettering Effect of Porous Silicon on SOI Structure

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

A Novel PSOI High Voltage Device Based on E-SIMOX Substrate

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Formation of Silicon on Insulator Using Separation by Implantation of Oxygen with Water Plasma

Double-gate SOI MOSFET Fabrication from Bulk Silicon Wafer

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

A new self-aligned BOI (Body-on-insulator) finfet fabricated on bulk SI wafers