Abstract:A series of low temperature processes incorporated in the silicon on insulator (SOI) formation using Si molecular beam epitaxial growth on porous silicon dramatically reduces the impurity ramp-up from the porous silicon substrate and lowers the doping level in the epitaxial Si layer. A double-layer porous silicon system with a spongy microstructure layer on top of a dendritic microstructure layer was fabricated on a moderately doped p-type Si wafer using a two-step anodization process, and was used as the substrate for Si epitaxy. An extended low temperature annealing in high vacuum was found to be helpful in stabilizing the porous silicon and making it less susceptible to microstructure change during the subsequent heat-treatment. Prior to epitaxy, a Ge-beam treatment was used to lower the temperature necessary for the Si surface cleaning. A low temperature preoxidation process stabilized the porous silicon during the subsequent high temperature oxidation. The choice of a moderately doped substrate and all these low temperature processes helped to achieve a Si epitaxial layer doping of 6 to 8 x 10(15) cm(-3), which is very close to meeting the requirement for direct device fabrication in the SOI without any additional doping compensation.

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Infrared absorption and reflection spectroscopic studies of SOI structures formed by oxygen or nitrogen implantation

Auger-Electron and Ir Spectroscopic Studies of Soi Structure Formed by Oxygen and Nitrogen Implantation

Optical Characterization of Doped Top Layers in SOI Structures Formed by Ion Implantation

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

Optical Effects of Doped Top Layers in Silicon-on-insulator Structures Formed by Ion Implantation

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Optical Characteristics of Multilayer Structures Formed by Ion-Beam Synthesis and Their Computer-Simulation

Effect of the Substrate Temperature on the Formation of SOI Materials by O Ion Implantation

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Synthesis of SOI Material Using Low Energy Water Ion Implantation

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Fabrication of Silicon-on-aln Novel Structure and Its Residual Strain Characterization

Some Material Structural Properties of SOI Substrates Produced by SDB Technology

Novel SOI technology - H+ implantation, bonding and separation

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Preparation of SiOC Composite Material Using High-Energy Heavy Ion Irradiation

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match