Abstract:Silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) coatings are amorphous thin-film materials composed of hydrogenated amorphous carbon (a-C:H), doped with silicon and oxygen. Compared to a-C:H, a-C:H:Si:O exhibits much lower susceptibility to oxidative degradation and higher thermal stability, making a-C:H:Si:O attractive for many applications. However, the physical mechanisms for this improved behavior are not understood. Here, the thermally induced structural evolution of a-C:H:Si:O was investigated in situ by X-ray photoelectron and absorption spectroscopy, as well as molecular dynamics (MD) simulations. The spectroscopy results indicate that upon high vacuum annealing, two thermally activated processes with a Gaussian distribution of activation energies with mean value E and standard deviation σ take place in a-C:H:Si:O: (a) ordering and clustering of sp2 carbon ( E ± σ = 0.22 ± 0.08 eV) and (b) conversion of sp3- to sp2-bonded carbon ( E ± σ = 3.0 ± 1.1 eV). The experimental results are in qualitative agreement with the outcomes of MD simulations performed using a ReaxFF potential. The MD simulations also indicate that the higher thermal stability of a-C:H:Si:O compared to a-C:H (with similar fraction of sp2-bonded carbon and hydrogen content) derives from the significantly lower fraction of strained carbon-carbon sp3 bonds in a-C:H:Si:O compared to a-C:H, which are more likely to break at elevated temperatures.

Structural Evolution of A-Si:H/sio 2 Multilayers Upon Step by Step Thermal Annealing

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Study of Crystallization and Phase Mixing in Sio2/Siox Superlattices Through Form Birefringence Measurements

Thermal Annealing of A-Si : H/A-Sinx : H Multilayers

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Raman study of structural order of a-SiNx:H and its change upon thermal annealing

Contribution of Multiple Emitting Centers to Luminescence from Si/SiO2 Multilayers with Step by Step Thermal Annealing

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Characterization Of Strained Si/Si1-Xgex/Si Heterostructures Annealed In Oxygen Or Argon

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Evolutions and distributions of Si nanocrystals and other Si oxidation states in Si-implanted SiO2 films

Evolution of Si Suboxides into Si Nanocrystals During Rapid Thermal Annealing As Revealed by Xps and Raman Studies

Influences of Annealing Temperature on the Optical Properties of SiOx Thin Film Prepared by Reactive Magnetron Sputtering

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Thermally Induced Structural Evolution of Silicon- and Oxygen-Containing Hydrogenated Amorphous Carbon: A Combined Spectroscopic and Molecular Dynamics Simulation Investigation.

Annealing Modulated Microstructural and Electrical Properties of Plasma-Enhanced Atomic Layer Deposition-Derived HfO2/SiO2 Nanolaminates on AlGaN/GaN