Abstract:The integrity of the hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface is essential for the enhanced performance of a-Si:H/c-Si heterojunction-based devices. However, during annealing processes aimed at passivating silicon dangling bonds, unexpected Si epitaxy and nanotwin formation tend to emerge, even under low-temperature conditions. Therefore, understanding the influence of such annealing on the a-Si:H/c-Si interfacial structure is therefore pivotal for device optimization. In this study, the atomic-scale structural transformation of the a-Si:H/c-Si heterointerface subjected to low-temperature annealing is delved into. The dynamic evolution of this interface is captured by employing in situ spherical aberration (CS)-corrected transmission electron microscopy (TEM), molecular dynamics (MD) simulations, and density functional theory (DFT) calculations. The TEM observations indicated that Si epitaxy initiated before Si nanotwin formation, and these nanotwins are inclined to revert to epitaxial structures upon sustained annealing. Through MD and DFT insights, the thermodynamic and kinetic intricacies driving the concerted tri-layer atomic shift characterizing the Si nanotwin-to-epitaxy transition are decoded. The findings shed light on the thermal behavior of a-Si:H/c-Si interfaces, offering new perspectives on the thermal management in silicon heterojunction devices.

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Thermal Annealing of A-Si : H/A-Sinx : H Multilayers

The Dependence Of The Interface And Shape On The Constrained Growth Of Nc-Si In A-Sinx/A-Si : H/A-Sinx Structures

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

Atomic-Scale Structural Dynamics at A-Si:H/c-si Heterointerface During Low-Temperature Thermal Annealing

Microstructures and Photoluminescence of A-Si:H/A-Sinx Multilayers Annealed at Different Temperature

Transmission Electron Microscopy Observation of Constrained Crystallization in A-Sih/A-Sinxh Multilayer Film

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

SiNx thickness dependent morphology and mechanical properties of CrAlN/SiNx nanomultilayers

Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Interface Constrained Growth For Size Control Nanofabrication: Mechanism And Experiments

The effect of post-treatments on crystallization in a-Si:H/a-SiNx:H multilayers

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H multilayers

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

Modeling of Silicon-Nanocrystal Formation in Amorphous Silicon/Silicon Dioxide Multilayer Structure

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization