Abstract:Nickel (Ni) induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The a-Si under and near the Ni-covered regions was found to be crystallized after heat treatment at 500 °C from 1 to 90 h. Micro-Auger electron spectroscopy revealed that a large amount of Ni stayed in the region under the original Ni coverage, but no Ni was detected either in the crystallized region next to the Ni coverage or in the amorphous region beyond the front of the laterally crystallized Si. X-ray photoelectron spectroscopy revealed a nonuniform Ni distribution through the depth of the crystallized film under the original Ni coverage. In particular, a Ni concentration peak was found to exist at the interface of the crystallized Si and the buried oxide. It was found that a layer of 5-nm-thick Ni could effectively induce lateral crystallization of over 100 μm of a-Si, but the lateral crystallization rate was found to decrease upon extended heat treatment. Transmission electron microscopy analysis showed that the crystallized film under the Ni coverage was composed of randomly oriented fine grains, while that outside the Ni coverage was mainly composed of large (110)-oriented grains. A unified mechanism is proposed to explain the Ni induced crystallization of a-Si and possible reasons for the reduction in the lateral crystallization rate are discussed.

The Dependence Of The Interface And Shape On The Constrained Growth Of Nc-Si In A-Sinx/A-Si : H/A-Sinx Structures

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN<sub>x</sub>/a-Si:H/a-SiN<sub>x</sub>structures

The Constrained Growth and Patterned Distribution of Nc-Si from A-Sinx/a-si:H/a-sinx: Mechanism and Experiments

Interface Constrained Growth For Size Control Nanofabrication: Mechanism And Experiments

THE SIZE CONTROL OF UNIFORM NANOCRYSTALLINE Si GRAINS BY CONSTRAINED GROWTH MODEL

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Control of size and shape of ncSi in aSiN x /aSi:H multilayers by laser induced constrained crystallization

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

The Growth Model and Experimental Validation of Size-Controlled Nanocrystalline Silicon

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Modeling of Silicon-Nanocrystal Formation in Amorphous Silicon/Silicon Dioxide Multilayer Structure

Fabrication and Characterization of the Size-Controlled and Patterned Nc-Si Dots

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Formation and Charging Effect of Si Nanocrystals in A-Sinx/a-si/a-sinx Structures

Annealing Effects on the Size of Si-nanocrystals Embedded in Bulk SiO

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Layer-thickness-dependent Formation of Si-nanocrystals Embedded in Amorphous Si/SiO2 Multilayers

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

Formation of the Patterned Nanocrystalline Si by Pulsed-Laser Interference Crystallization of A-Si:H Thin Films

Formation of two- Or three-dimentional patterned structures of silicon nanocrystals

Two-Dimensional Patterned Nc-Si Arrays Prepared by the Method of Laser Interference Crystallization